Last edited by Kabei
Monday, July 27, 2020 | History

2 edition of Charge Trapping in Semiconductor Detectors found in the catalog.

Charge Trapping in Semiconductor Detectors

Atomic Energy of Canada Limited.

Charge Trapping in Semiconductor Detectors

Theoretical Approach.

by Atomic Energy of Canada Limited.

  • 394 Want to read
  • 26 Currently reading

Published by s.n in S.l .
Written in English


Edition Notes

1

SeriesAtomic Energy of Canada Limited. AECL -- 3786
ContributionsBlair, J.M., Mcmath, T.A.
ID Numbers
Open LibraryOL21971595M

Charge trapping degrades the energy resolution of germanium (Ge) detectors, which require to have increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay. We investigate the charge trapping processes uti-lizing nine planar detectors fabricated from USD-grown crystals with well-known net impurity levels. c 1 Dielectric relaxation and Charge trapping characteristics study in Germanium based MOS devices with HfO 2/Dy 2O 3 gate stacks M. Shahinur Rahman ,a, Member, IEEE, E.K. Evangelou 3,b, Member, IEEE 1GSI - Helmholtz Zentrum für Schwerionenforschung, D Darmstadt, Germany 2OncoRay-Medical Faculty, University of Technology- Dresden, D Dresden, Germany.

The rapid development of single polarity charge sensing techniques implemented in recent years on semiconductor γ-ray detectors are summarized, and a fundamental interpretation of these. Because of the effects of charge trapping, the mean pulse amplitude varies with position of interaction in a p-i-n detector; several theories have been developed to predict the shape of the full energy peak on the basis of this variation. Contrary to the assumptions of these theories, it is shown that the spread in amplitude also varies with the position of interaction.

  The formation of a response signal in the presence of a layer of trapping centers in semiconductor SiC ionizing radiation detectors is considered on the basis of a new model. Since the trapping layer is situated near the detector surface, nuclear particles that possess long tracks partly generate a charge behind this layer. Under certain conditions, the proposed model leads to a . The most important regions for charge collection are those with high electric fields; in semiconductor detectors the high electric field is at the surface. Unfortunately, the surface region is most likely to contain impurities, especially in p-n junctions formed by high-temperature diffusion.


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Charge Trapping in Semiconductor Detectors by Atomic Energy of Canada Limited. Download PDF EPUB FB2

Charge trap flash (CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash is a type of floating-gate MOSFET memory technology, but differs from the conventional floating-gate technology in that it uses a silicon nitride film to store electrons rather than the doped polycrystalline silicon typical of a floating-gate structure.

Some important features of semiconductor detectors (pulse height, energy resolution, photopeak efficiency) are strongly affected by charge collection efficiency; therefore low charge mobility and trapping/detrapping phenomena can more or less degrade the CdTe based detectors performance, depending on the distance between the charge formation.

Abstract: The transient response of surface barrier detectors fabricated from semi-insulating CdTe has been analyzed under the conditions of trapping and detrapping. An analysis of the response of these devices to alphas allows measurement of material parameters pertinent to gamma detection and also verifies a theoretical model of trapping and by: 1.

For gas-filled and semiconductor detectors the total ionization produced is that which is measured and represents the energy of the incoming particle.

An important quantity for a detection medium is the w-value, which is defined as the average energy required to create an electron-ion or electron-hole pair in gases or semiconductors, respectively. In a given ionization medium the w-value is.

Charge Trapping in Semiconductor Detectors book Trap, in physics, any location within a solid (generally a semiconductor or an insulator) that restricts the movement of electrons and holes—i.e., equivalent positive electrical charges that result from the absence of an electron within a crystal structure.A trap consists of either a chemical impurity or an imperfection in the regular spacing of the atoms that make up the solid.

Detection mechanism. In semiconductor detectors, ionizing radiation is measured by the number of charge carriers set free in the detector material which is arranged between two electrodes, by the ng radiation produces free electrons and number of electron-hole pairs is proportional to the energy of the radiation to the semiconductor.

@article{osti_, title = {Unipolar charge sensing with coplanar electrodes -- Application to semiconductor detectors}, author = {Luke, P N}, abstractNote = {A novel method to perform preferential sensing of single-polarity charge carriers in ionization detectors is presented.

It achieves the same function as Frisch grids commonly employed in gas ion chambers but uses a coplanar electrode. Semiconductor nanocrystal optical and charge transport properties are largely influenced by the trapping of charge carriers on the nanocrystal surface.

Charge trapping increases the non-radiative exciton decay pathways, thus decreasing the fluorescence quantum yield, and it also impedes efficient charge transfer at the nanocrystal interface.

On a single nanocrystal basis, charge trapping. Spieler: Semiconductor Detector Systems, Oxford University Press, Charge Collection in pad detectors Charge collection in strip and pixel detectors Trapping Sensor Materials Electronics Electronic Noise Pulse Shaping Threshold Discriminator Systems.

The dominant problem limiting the energy resolution of compound semiconductor based radiation detectors is the trapping of charge carriers.

The charge trapping affects energy resolution through the carrier lifetime more than through the mobility. Conventionally, the effective carrier lifetime is determined using a 2-step process based on measurement of the mobility-lifetime product (μτ) and.

Charge collection efficiency measurements in silicon detectors at low temperature (Tcharge collection under these conditions of low temperature and low electric field is necessary for background. This book describes the basic technologies and operation principles of charge-trapping non-volatile memories.

The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology.

Radiation Detection: Concepts, Methods, and Devices provides a modern overview of radiation detection devices and radiation measurement methods. The book topics have been selected on the basis of the authors’ many years of experience designing radiation detectors and teaching radiation detection and measurement in a classroom environment.

This book is designed to give the reader more than a. Trapping Phenomena in Nanocrystalline Semiconductors. Non-equilibrium free carriers (electrons and holes) can be generated in bulk semiconductor materials by various processes, such as light absorption, high electric field, carrier injection through a barrier, irradiation with high-energy particles.

6. Conclusions. The adjoint mapping method enables the efficient calculation of charge-pulses produced by semiconductor radiation detectors: the solution of a single, time-dependent problem is required to compute Green's function for selected electrodes, provided the weighting potential for the electrodes and the steady-state electric field within the device are known.

Semiconductor Detectors Helmuth Spieler SLUO Lectures on Detector Techniques, Octo LBNL 13 Intrinsic Resolution of Semiconductor Detectors Si: εi= eV F= Ge: εi= eV F= Detectors with good efficiency for this energy range have sufficiently small capacitance to allow electronic noise of ~ eV FWHM, so.

The transient response of surface barrier detectors fabricated from semi-insulating CdTe has been analyzed under the conditions of trapping and detrapping. An analysis of the response of these devices to alphas allows measurement of material parameters pertinent to gamma detection and also verifies a theoretical model of trapping and detrapping.

Actual and theoretical pulses presented here. The process of charge trapping is illustrated in the energy band diagrams of Figure 2c,d using two “donor‐type” midgap states. In the “off state”, where the Fermi level is above the trap levels (E T1 and E T2) the traps are occupied by an electron and are neutral.

In the “on state”, the traps are void of electrons (occupied by a. Ideal radiation detectors should have no charge in the absence of radiation (and lots of charge in the presence of an ionizing radiation event). This is one of the reasons why some semiconductor detectors are cooled with liquid nitrogen (~ 77 K).

Cooling reduces the number of electron-hole pairs in the crystal. Thus, the charge mobility of a semiconductor is a complex function of charge carrier concentration, trap types and their densities, thermal energies, the presence of scattering sites, and so on.

In the presence of shallow traps, the multiple trapping and release (MTR) model is widely employed to describe charge mobility in crystalline. In detectors based on semiconductor compounds, trapping effects, material nonhomogeneities, and anomalous distribution of the internal electric field are known to affect the charge collection of.We explore charge-trapping effects in cryogenic particle detectors composed of single-crystal silicon substrates with both titanium transition-edge sensors (TES) and charge-collection electrodes deposited upon them.

These effects include transients on various time scales which follow the evolution of different kinds of space charge, intrinsic gain and linearity shifts in signals characteristic.Monday 20 March Arrival and coffee/tea Workshop opening: Keith McKenna Session 1 (chair: Keith McKenna) David Scanlon (University College London, United Kingdom) I1.

Charge Trapping in Transparent Conducting Oxide SnO2 Jack Strand (University College London, United Kingdom) C1. The role of bipolarons in the formation of defects in amorphous hafnia.